SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

The present invention provides a semiconductor device, which comprises a first semiconductor layer of the first conductivity type having a plurality of trenches formed therein. A second semiconductor layer of the second conductivity type composed of an epitaxial layer is buried in the trenches in the first semiconductor layer. The trench has surface orientations including a surface orientation of a sidewall at an upper stage made slower in epitaxial growth speed than a surface orientation of a sidewall at a lower stage.