METHOD FOR FORMING COPPER LINE

Embodiments relate to a method for forming a copper line. According to embodiments, the method may include forming an insulation layer on a semiconductor substrate, forming a copper line pattern on the insulation layer, and forming a copper line; removing a copper oxide layer through a reactive prec...

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1. Verfasser: SHIM KYU CHEOL
Format: Patent
Sprache:eng
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Zusammenfassung:Embodiments relate to a method for forming a copper line. According to embodiments, the method may include forming an insulation layer on a semiconductor substrate, forming a copper line pattern on the insulation layer, and forming a copper line; removing a copper oxide layer through a reactive preclean process, the copper oxide layer being formed on a surface of the copper line in the step of forming the copper line, and depositing a capping layer covering the copper line and the insulation layer without the reactive preclean process and vacuum interruption.