More accurate and physical method to account for lithographic and etch contributions in OPC models

A method for manufacturing a corrected photo mask using an optical proximity effect correction method, the method comprising of the steps of: producing a test mask that provides a mask pattern for extracting a plurality of function models of a plurality of processes for the optical proximity effect correction method; transferring the mask pattern to a wafer by executing the plurality of processes, wherein each one of the plurality of processes forms a resulting pattern on the wafer; measuring the dimensions of the resulting pattern on the wafer after each one of the plurality of processes is executed; obtaining a function model for each one of the plurality of processes executed in which the dimensions of a simulated resulting pattern match the dimensions of the resulting pattern on the wafer after each one of the plurality of processes is executed; providing a photo mask design pattern; obtaining a mask pattern of which a simulated transferred pattern matches the photo mask design pattern by applying the function model for each one of the plurality of processes sequentially and creating mask data in accordance with the simulated transferred pattern; and producing a corrected photo mask in accordance with the created mask data.