Alternate pad structures/passivation inegration schemes to reduce or eliminate IMC cracking in post wire bonded dies during Cu/Low-K BEOL processing

Passivation integration schemes and pad structures to reduce the stress gradients and/or improve the contact surface existing between the Al in the pad and the gold wire bond. One of the pad structures provides a plurality of recessed pad areas which are formed in a single aluminum pad. An oxide mesa can be provided under the aluminum pad. Another pad structure provides a single recessed pad area which is formed in a single aluminum pad, and the aluminum pad is disposed above a copper pad and a plurality of trench/via pads. Still another pad structure provides a single recessed pad area which is formed in a single aluminum pad, and the aluminum pad is disposed above a portion of a copper pad, such that the aluminum pad and the copper pad are staggered relative to each other.