NON-VOLATILE MEMORY AND MANUFACTURING METHOD AND OPERATING METHOD THEREOF

NON-VOLATILE MEMORY AND MANUFACTURING METHOD AND OPERATING METHOD THEREOF

A non-volatile memory is provided. At least two bit lines are disposed in a substrate. The two bit lines are arranged in parallel and extend in a first direction. A plurality of select gate structures is disposed on the substrate between the two bit lines respectively. The select gate structures are...

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Hauptverfasser: PITTIKOUN SAYSAMONE, CHEN SHI-HSIEN, LEE YUNGUNG, HWANG HANN-PING
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator PITTIKOUN SAYSAMONE
CHEN SHI-HSIEN
LEE YUNGUNG
HWANG HANN-PING
description A non-volatile memory is provided. At least two bit lines are disposed in a substrate. The two bit lines are arranged in parallel and extend in a first direction. A plurality of select gate structures is disposed on the substrate between the two bit lines respectively. The select gate structures are arranged in parallel and extend in a first direction. A gap is disposed between each two neighboring select gate structures. A plurality of control gate lines is disposed on the substrate and fills in the gaps between two neighboring select gate structures respectively. The control gate lines are arranged in parallel and extend in a second direction, which crosses the first direction. A plurality of charge storage layers is disposed between the select gate structures and control gate lines respectively.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title NON-VOLATILE MEMORY AND MANUFACTURING METHOD AND OPERATING METHOD THEREOF
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