NON-VOLATILE MEMORY AND MANUFACTURING METHOD AND OPERATING METHOD THEREOF

A non-volatile memory is provided. At least two bit lines are disposed in a substrate. The two bit lines are arranged in parallel and extend in a first direction. A plurality of select gate structures is disposed on the substrate between the two bit lines respectively. The select gate structures are arranged in parallel and extend in a first direction. A gap is disposed between each two neighboring select gate structures. A plurality of control gate lines is disposed on the substrate and fills in the gaps between two neighboring select gate structures respectively. The control gate lines are arranged in parallel and extend in a second direction, which crosses the first direction. A plurality of charge storage layers is disposed between the select gate structures and control gate lines respectively.