Forming method and forming system for insulation film

A gate insulation film ( 104 ) of a MISFET ( 100 ) is constituted of a silicon oxide film ( 106 ), silicon nitride film ( 107 ), and high-permittivity film ( 108 ). The silicon oxide film ( 106 ) and silicon nitride film ( 107 ) are formed by microwave plasma processing with a radial line slot anten...

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Bibliographische Detailangaben
Hauptverfasser:	NAKANISHI TOSHIO, MURAKAWA SHIGEMI, KUMAI TOSHIKAZU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	A gate insulation film ( 104 ) of a MISFET ( 100 ) is constituted of a silicon oxide film ( 106 ), silicon nitride film ( 107 ), and high-permittivity film ( 108 ). The silicon oxide film ( 106 ) and silicon nitride film ( 107 ) are formed by microwave plasma processing with a radial line slot antenna.