Semiconductor structure for draining an overvoltage pulse, and method for manufacturing same

A semiconductor structure for draining an overvoltage pulse comprises a first semiconductor region having a first doping type and a semiconductor layer arranged adjacent the first semiconductor region. The semiconductor layer includes an isolation structure configured to electrically isolate a second semiconductor region from a surrounding region. The second semiconductor region has a second doping type. A third semiconductor region having the first doping type is arranged adjacent the second semiconductor region and is disposed within an area limited by the isolation structure. A first contacting structure is configured to provide an electrical contact with the first semiconductor region, and a second contacting structure is configured to provide an electrical contact with the third semiconductor region. The first and second semiconductor regions are more highly doped than the second semiconductor region.