Complementary metal oxide semicoductor image sensor and method of fabricating the same
The CMOS image sensor includes one or more photodiodes formed on a semiconductor substrate to generate current in accordance with the amount of incident light, an interlayer insulating layer formed on the semiconductor substrate including the photodiodes, color filter layers formed on the interlayer...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | The CMOS image sensor includes one or more photodiodes formed on a semiconductor substrate to generate current in accordance with the amount of incident light, an interlayer insulating layer formed on the semiconductor substrate including the photodiodes, color filter layers formed on the interlayer insulating layer to transmit specific wavelengths, and micro-lenses formed on the color filter layers between the insulating layer patterns to concentrate light on the photodiodes. |
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