CVD reactor with stabilized process chamber height
The invention relates to a CVD reactor which comprises a process chamber, disposed inside a reactor housing and having process chamber walls, a process chamber bottom and a process chamber ceiling spaced apart by a distance from the process chamber bottom. The reactor housing comprises at least one...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | The invention relates to a CVD reactor which comprises a process chamber, disposed inside a reactor housing and having process chamber walls, a process chamber bottom and a process chamber ceiling spaced apart by a distance from the process chamber bottom. The reactor housing comprises at least one reactor wall which can be slightly elastically deformed when the pressure within the reactor housing changes. Said reactor wall is provided with an especially center opening through which a functional element projects. Said functional element is firmly linked via a first section with a process chamber wall and has a second section that is located outside the reactor housing. In order to increase the reproducibility of results, the functional element is linked with the reactor wall so as to elastically yield. |
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