STORAGE DEVICE AND SEMICONDUCTOR DEVICE

STORAGE DEVICE AND SEMICONDUCTOR DEVICE

A storage device includes a memory cell having a storage element having a characteristic of changing from a state of a high resistance value to a state of a low resistance value by being supplied with a voltage equal to or higher than a first threshold voltage, and changing from a state of a low res...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: NAGAO HAJIME, OKAZAKI NOBUMICHI, HACHINO HIDENARI, NAKASHIMA CHIEKO
Format: Patent
Sprache:eng
Schlagworte:
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Beschreibung
Zusammenfassung:A storage device includes a memory cell having a storage element having a characteristic of changing from a state of a high resistance value to a state of a low resistance value by being supplied with a voltage equal to or higher than a first threshold voltage, and changing from a state of a low resistance value to a state of a high resistance value by being supplied with a voltage equal to or higher than a second threshold voltage different in polarity from the first threshold voltage, and a circuit element connected in series with the storage element, wherein letting R be a resistance value of the storage element after writing, V be the second threshold voltage, and I be a current that can be passed through the storage element at a time of erasure, R>=V/I.