Anode reactive dual magnetron sputtering
A sputtering apparatus of the present invention includes a chamber for containing a plasma. A first and a second target are positioned in the chamber proximate to a substrate. The first and the second targets include at least one type of target material. A power supply is coupled to the first and th...
Gespeichert in:
Hauptverfasser: | , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | A sputtering apparatus of the present invention includes a chamber for containing a plasma. A first and a second target are positioned in the chamber proximate to a substrate. The first and the second targets include at least one type of target material. A power supply is coupled to the first and the second targets. The power supply supplies power to the first and the second targets such that when the first target sputters target material, the second target becomes anodic and when the second target sputters target material, the first target becomes anodic. The sputtering apparatus also includes a reactive source that supplies reactive species proximate to the substrate. The reactive species are supplied in synchronization with the power supplied to the first and the second targets. The reactive species combines with the sputtered target material to generate a sputtered film on the substrate. |
---|