Method to obtain fully silicided gate electrodes

The present invention provides a method of fabricating a microelectronics device. In one aspect, the method comprises depositing a protective layer ( 510 ) over a spacer material ( 415 ) located over gate electrodes ( 250 ) and a doped region ( 255 ) located between the gate electrodes ( 250 ), remo...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	MEHRAD FREIDOON, VITALE STEVEN A, HONG HYESOOK
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!