Method to obtain fully silicided gate electrodes

The present invention provides a method of fabricating a microelectronics device. In one aspect, the method comprises depositing a protective layer ( 510 ) over a spacer material ( 415 ) located over gate electrodes ( 250 ) and a doped region ( 255 ) located between the gate electrodes ( 250 ), removing a portion of the spacer material ( 415 ) and the protective layer ( 510 ) located over the gate electrodes ( 250 ). A remaining portion of the spacer material ( 415 ) remains over the top surface of the gate electrodes ( 250 ) and over the doped region ( 255 ), and a portion of the protective layer ( 510 ) remains over the doped region ( 255 ). The method further comprises removing the remaining portion of the spacer material ( 415 ) to form spacer sidewalls on the gate electrodes ( 250 ), expose the top surface of the gate electrodes ( 250 ), and leave a remnant of the spacer material ( 415 ) over the doped region ( 255 ). Source/drains are formed adjacent the gate electrodes 250 and through the remnant of the spacer material ( 415 ), and a metal is incorporated into the gate electrodes ( 250 ).