Method of buffer layer formation for RRAM thin film deposition

A method of buffer layer formation for RRAM thin film deposition includes preparing a substrate; depositing a bottom electrode on the substrate; depositing a thin layer of a transition metal having a multiple valence on the bottom electrode; depositing a layer of metal oxide on the transition metal;...

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Bibliographische Detailangaben
Hauptverfasser: LI TINGKAI, ZHUANG WEI-WEI, CHARNESKI LAWRENCE J, HSU SHENG T, EVANS DAVID R
Format: Patent
Sprache:eng
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Zusammenfassung:A method of buffer layer formation for RRAM thin film deposition includes preparing a substrate; depositing a bottom electrode on the substrate; depositing a thin layer of a transition metal having a multiple valence on the bottom electrode; depositing a layer of metal oxide on the transition metal; depositing a top electrode on the metal oxide; annealing the substrate and the layers formed thereon; and completing the RRAM.