Vacuum processing apparatus

A vacuum processing apparatus for plasma processing a sample, by controlling the temperature distribution, the RF bias and the electrostatic adsorption bias of the sample table, wherein the sample table comprises a plurality of sample table blocks (first, second, third, and nth sample table blocks) divided from the sample table circumferentially, that is, coaxially or radially into a plurality of portions each in a structure independent electrically and heat conductively, and each of the sample table blocks has a unit for conducting independent control for each of the temperature, the RF bias, or the pressure at the wafer rear face of the wafer.