Pulverized organic semiconductors and method for vapor phase deposition onto a support

The invention relates to a process for vapor deposition of one or more compounds onto a support, in which (i) the compound is introduced in a solid or gaseous state into a carrier gas stream, (ii) the compound is present in a gaseous state in the carrier gas stream, (iii) the gaseous compound is pre...

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Bibliographische Detailangaben
Hauptverfasser:	ROSCH JOACHIM, GESSNER THOMAS, BOLD MARKUS, SACHWEH BERND
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The invention relates to a process for vapor deposition of one or more compounds onto a support, in which (i) the compound is introduced in a solid or gaseous state into a carrier gas stream, (ii) the compound is present in a gaseous state in the carrier gas stream, (iii) the gaseous compound is precipitated, (iv) the compound precipitated in step (iii) is once again brought into the gaseous state, and (v) the gaseous compound is subsequently precipitated on the support, wherein the carrier gas stream comprising the gaseous compound(s) is cooled to a temperature below the sublimation temperature of the compound(s) by introduction of a gas stream.