Chemical-mechanical polishing (CMP) slurry containing clay and CeO2 abrasive particles and method of planarizing surfaces

A composition for planarizing or polishing a surface comprising (a) a liquid carrier, and (b) solids comprising about 0.1 to about 10% by weight clay abrasive particles, and about 0.1% to about 50% by weight CeO2 particles, based on the total weight of solids in the composition, said clay and CeO2 a...

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Bibliographische Detailangaben
Hauptverfasser:	EISENHOUR DON, IANIRO MICHAEL R, FANG MINGMING
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GRINDING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES TOOLS FOR GRINDING, BUFFING, OR SHARPENING TRANSPORTING
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Beschreibung
Zusammenfassung:	A composition for planarizing or polishing a surface comprising (a) a liquid carrier, and (b) solids comprising about 0.1 to about 10% by weight clay abrasive particles, and about 0.1% to about 50% by weight CeO2 particles, based on the total weight of solids in the composition, said clay and CeO2 abrasive particles having a particle size such that at least 90% of the particles (by number), when slurried in water, have a particle size in the range of about 10 nm to about 10 mum.