Precursors for depositing silicon containing films

A precursor composition is disclosed for use in the chemical vapor deposition of a material selected from the group consisiting of silicon oxynitride, silicon nitride, and silicon oxide. The composition comprises a hydrazinosilane of the formula: [R12N-NH]nSi(R2)4-n where each R1 is independently se...

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Bibliographische Detailangaben
Hauptverfasser:	XIAO MANCHAO, HOCHBERG ARTHUR K, CUTHILL KIRK S
Format:	Patent
Sprache:	eng
Schlagworte:	ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY ORGANIC CHEMISTRY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A precursor composition is disclosed for use in the chemical vapor deposition of a material selected from the group consisiting of silicon oxynitride, silicon nitride, and silicon oxide. The composition comprises a hydrazinosilane of the formula: [R12N-NH]nSi(R2)4-n where each R1 is independently selected from alkyl groups of C1 to C6; each R2 is independently selected from the group consisting of hydrogen, alkyl, vinyl, allyl, and phenyl; and n=1-4.