Tunable antifuse element and method of manufacture

A tunable antifuse element ( 102, 202, 204, 504, 952 ) and method of fabricating the tunable antifuse element, including a substrate material ( 101 ) having an active area ( 106 ) formed in a surface, a gate electrode ( 104 ) having at least a portion positioned above the active area ( 106 ), and a dielectric layer ( 110 ) disposed between the gate electrode ( 104 ) and the active area ( 106 ). The dielectric layer ( 110 ) including the fabrication of one of a tunable stepped structure ( 127 ). During operation, a voltage applied between the gate electrode ( 104 ) and the active area ( 106 ) creates a current path through the dielectric layer ( 110 ) and a rupture of the dielectric layer ( 110 ) in a plurality of rupture regions ( 130 ). The dielectric layer ( 110 ) is tunable by varying the stepped layer thicknesses and the geometry of the layer.