Testing electromigration at multiple points of a single node

Systems and methods for testing the reliability of a semiconductor component are disclosed herein. One embodiment of a method for testing reliability, among others, comprises providing simulation code of a standard cell, wherein the standard cell represents the semiconductor component. The method includes extracting foliage points of a node of the standard cell and running a reliability test on each foliage point. Then, the standard cell can be characterized by the worst performing foliage point. A foliage point, for example, may be defined as a portion of a node that can be connected to a wire or route leading to external circuitry.