Lithographic projection apparatus and method of exposing a semiconductor wafer with a pattern from a mask

A single through-the-focus exposure of a semiconductor wafer is achieved by a lithographic projection apparatus, which has the capability of generating an exposure profile comprising substantially two separate portions, or maxima, of exposure light. Both portions of the light are directed to the mas...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
1. Verfasser:	NOELSCHER CHRISTOPH
Format:	Patent
Sprache:	eng
Schlagworte:	ACCESSORIES THEREFOR APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USINGWAVES OTHER THAN OPTICAL WAVES APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FORPROJECTING OR VIEWING THEM APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A single through-the-focus exposure of a semiconductor wafer is achieved by a lithographic projection apparatus, which has the capability of generating an exposure profile comprising substantially two separate portions, or maxima, of exposure light. Both portions of the light are directed to the mask, on which the pattern is formed. The mask is thus exposed coincidently, but on separately located surface positions. Two different patterned portions of the exposure light are then focused onto the wafer. In a preferred embodiment, the two portions are generated by means of a double slit. The exposure is combined with a continuous through-the-focus exposure, wherein a tilt is applied to the wafer stage.