Grid transparency and grid hole pattern control for ion beam uniformity

A design process for varying hole locations or sizes or both in an ion beam grid includes identifying a control grid to be modified; obtaining a change factor for the grid pattern; and using the change factor to generate a new grid pattern. The change factor is one or both of a hole location change...

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Hauptverfasser:	SIEGFRIED DANIEL E, KAMEYAMA IKUYA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CALCULATING COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY PHYSICS
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creator	SIEGFRIED DANIEL E KAMEYAMA IKUYA
description	A design process for varying hole locations or sizes or both in an ion beam grid includes identifying a control grid to be modified; obtaining a change factor for the grid pattern; and using the change factor to generate a new grid pattern. The change factor is one or both of a hole location change factor or a hole diameter change factor. Also included is an ion beam grid having the characteristic of hole locations or sizes or both defined by a change factor modification of control grid hole locations or sizes or both.
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subjects	BASIC ELECTRIC ELEMENTS CALCULATING COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY PHYSICS
title	Grid transparency and grid hole pattern control for ion beam uniformity
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