Grid transparency and grid hole pattern control for ion beam uniformity

Grid transparency and grid hole pattern control for ion beam uniformity

A design process for varying hole locations or sizes or both in an ion beam grid includes identifying a control grid to be modified; obtaining a change factor for the grid pattern; and using the change factor to generate a new grid pattern. The change factor is one or both of a hole location change...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SIEGFRIED DANIEL E, KAMEYAMA IKUYA
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
PHYSICS
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Beschreibung
Zusammenfassung:A design process for varying hole locations or sizes or both in an ion beam grid includes identifying a control grid to be modified; obtaining a change factor for the grid pattern; and using the change factor to generate a new grid pattern. The change factor is one or both of a hole location change factor or a hole diameter change factor. Also included is an ion beam grid having the characteristic of hole locations or sizes or both defined by a change factor modification of control grid hole locations or sizes or both.