Device for producing electroconductive passages in a semiconductor wafer by means of thermomigration

A device for producing electroconductive passages in a semi-conductor wafer, by thermomigration, by producing a temperature gradient between the surfaces of the semiconductor wafer which is arranged in a recipient closed in a vacuum-tight manner and containing a good heat-conductive gas, between an...

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Bibliographische Detailangaben
Hauptverfasser:	KRIEGEL BERND, REETZ ROLAND, SCHINDEL KARSTEN, ENSLEN MARKO, RASEL MARIO, KUDELLA FRANK
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE ADHESIVES AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL PAINTS POLISHES PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL USE OF MATERIALS AS ADHESIVES
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Beschreibung
Zusammenfassung:	A device for producing electroconductive passages in a semi-conductor wafer, by thermomigration, by producing a temperature gradient between the surfaces of the semiconductor wafer which is arranged in a recipient closed in a vacuum-tight manner and containing a good heat-conductive gas, between an inductively heated susceptor used as a heat source, and a heat sink through which a cooling medium flows, and by applying a doping substance to the surface of the semiconductor wafer facing the heat sink. The susceptor is connected to the heat sink which is arranged in such a way that it can be rotated, together with the susceptor. In the event of high purity requirements, the recipient is divided into two gas volumes which are separated from each other in a gastight manner, one gas volume consisting of a processing chamber receiving the susceptor, and the other gas volume consisting of an inductor chamber receiving the inductor.