Semiconductor device having a cylindrical capacitor element
A semiconductor device includes a cylindrical capacitor having a bottom electrode, a capacitor insulator film and a top electrode. The top electrode includes first and second electrode portions insulated from each other and opposing the inner surface and outer surface, respectively, of the bottom el...
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | A semiconductor device includes a cylindrical capacitor having a bottom electrode, a capacitor insulator film and a top electrode. The top electrode includes first and second electrode portions insulated from each other and opposing the inner surface and outer surface, respectively, of the bottom electrode. The second electrode portion is deposited prior to the bottom electrode, preventing collapse of the bottom electrode during manufacture of the semiconductor device. |
---|