Integrated high voltage capacitor and a method of manufacture therefor
The present invention provides an integrated high voltage capacitor, a method of manufacture therefore, and an integrated circuit chip including the same. The integrated high voltage capacitor, among other features, includes a first capacitor plate ( 120 ) located over or in a semiconductor substrat...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | The present invention provides an integrated high voltage capacitor, a method of manufacture therefore, and an integrated circuit chip including the same. The integrated high voltage capacitor, among other features, includes a first capacitor plate ( 120 ) located over or in a semiconductor substrate ( 105 ), and an insulator ( 130 ) located over the first capacitor plate ( 120 ), at least a portion of the insulator ( 130 ) comprising an interlevel dielectric layer ( 135, 138, 143 , or 148 ). The integrated high voltage capacitor further includes a second capacitor plate ( 160 ) located over the insulator ( 130 ). |
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