Integrated circuit arrangement with low-resistance contacts and method for production thereof

An integrated circuit arrangement and fabrication method is presented. The integrated circuit arrangement contains a semiconductor and a metal electrode. The contact area between a semiconductor and the electrode is increased without increasing the lateral dimensions using partial regions of the sem...

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Hauptverfasser: ROESNER WOLFGANG, HOFMANN FRANZ, SPECHT MICHAEL, LUYKEN RICHARD J
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Sprache:eng
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creator ROESNER WOLFGANG
HOFMANN FRANZ
SPECHT MICHAEL
LUYKEN RICHARD J
description An integrated circuit arrangement and fabrication method is presented. The integrated circuit arrangement contains a semiconductor and a metal electrode. The contact area between a semiconductor and the electrode is increased without increasing the lateral dimensions using partial regions of the semiconductor and/or of the electrode that extend through a transition layer between the semiconductor and electrode.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Integrated circuit arrangement with low-resistance contacts and method for production thereof
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