Integrated circuit arrangement with low-resistance contacts and method for production thereof

Integrated circuit arrangement with low-resistance contacts and method for production thereof

An integrated circuit arrangement and fabrication method is presented. The integrated circuit arrangement contains a semiconductor and a metal electrode. The contact area between a semiconductor and the electrode is increased without increasing the lateral dimensions using partial regions of the sem...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: ROESNER WOLFGANG, HOFMANN FRANZ, SPECHT MICHAEL, LUYKEN RICHARD J
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An integrated circuit arrangement and fabrication method is presented. The integrated circuit arrangement contains a semiconductor and a metal electrode. The contact area between a semiconductor and the electrode is increased without increasing the lateral dimensions using partial regions of the semiconductor and/or of the electrode that extend through a transition layer between the semiconductor and electrode.