Semiconductor device having a high carbon content strain inducing film and a method of manufacture therefor

Semiconductor device having a high carbon content strain inducing film and a method of manufacture therefor

The present invention provides a method for manufacturing a semiconductor device as well as a semiconductor device. The method, among other steps, may include forming a gate structure ( 230 ) over a substrate ( 210 ), and forming a strain inducing film ( 330, 520, 530 or 810 ) over the substrate ( 2...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: YOCUM TROY, BATHER WAYNE A, MEHTA NARENDRA S
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The present invention provides a method for manufacturing a semiconductor device as well as a semiconductor device. The method, among other steps, may include forming a gate structure ( 230 ) over a substrate ( 210 ), and forming a strain inducing film ( 330, 520, 530 or 810 ) over the substrate ( 210 ) and proximate the gate structure ( 230 ), the strain inducing film ( 330, 520, 530 or 810 ) comprising a bis t-butylaminosilane (BTBAS) silicon nitride layer formed using ratio of bis t-butylaminosilane (BTBAS) to ammonia (NH3) of 1:1 or greater.