Pattern specification method and pattern specification apparatus

A pattern specification method for specifying a drawn microscopic pattern, comprising the step of creating a first pattern in which process shift information is reflected on a pattern expressed by design data, the step of enlarging the drawn pattern, the step of performing pattern matching between t...

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Bibliographische Detailangaben
Hauptverfasser:	ATAKA MASASHI, SATO HITOMI
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY GAMMA RAY OR X-RAY MICROSCOPES HOLOGRAPHY IRRADIATION DEVICES MATERIALS THEREFOR MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS NUCLEAR ENGINEERING NUCLEAR PHYSICS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR TESTING
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Beschreibung
Zusammenfassung:	A pattern specification method for specifying a drawn microscopic pattern, comprising the step of creating a first pattern in which process shift information is reflected on a pattern expressed by design data, the step of enlarging the drawn pattern, the step of performing pattern matching between the first pattern which corresponds to the drawn pattern to-be-specified or a pattern which include patterns surrounding this first pattern and the enlarged pattern or an enlarged pattern which includes enlarged patterns surrounding this enlarged pattern, and the step of outputting the enlarged pattern which matches most in the pattern matching.