SPUTTERING PROCESS FOR DEPOSITING INDIUM TIN OXIDE AND METHOD FOR FORMING INDIUM TIN OXIDE LAYER

A sputtering process of indium tin oxide (ITO) is provided. The sputtering process includes the following steps. First, a substrate is moved into a reaction chamber, wherein an ITO target is disposed inside the reaction chamber. Then, a plasma gas and a reaction gas are provided into the reaction ch...

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Bibliographische Detailangaben
Hauptverfasser:	LEE YUOU, CHENG TSUNGI, HSU HUNG-I
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A sputtering process of indium tin oxide (ITO) is provided. The sputtering process includes the following steps. First, a substrate is moved into a reaction chamber, wherein an ITO target is disposed inside the reaction chamber. Then, a plasma gas and a reaction gas are provided into the reaction chamber to form an ITO layer on the substrate. The reaction gas comprises at least hydrogen having a volume ratio of 1%~4% based on the total gas volume in the reaction chamber. Furthermore, a method of forming an indium tin oxide layer is also provided.