PACKAGE FOR A HIGH-FREQUENCY ELECTRONIC DEVICE
The electronic device comprises a substrate ( 1 ) with a cavity ( 6 ) in which an active device ( 8 ) is present. On the first side ( 2 ) of the substrate an interconnect structure ( 17 ) extends over the cavity and the substrate. On the second side ( 3 ) of the substrate to which the cavity extends...
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creator | HURKX GODEFRIDUS A.M KEMMEREN ANTONIUS LUCIEN A.M JANSMAN ANDREAS B.M DEKKER RONALD VAN NOORT WIBO D |
description | The electronic device comprises a substrate ( 1 ) with a cavity ( 6 ) in which an active device ( 8 ) is present. On the first side ( 2 ) of the substrate an interconnect structure ( 17 ) extends over the cavity and the substrate. On the second side ( 3 ) of the substrate to which the cavity extends, a heat sink ( 23 ) is available. The device is particularly suitable for use at high frequencies, for instance higher than 2 GHz and under conditions of high dissipation. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2006131736A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2006131736A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2006131736A13</originalsourceid><addsrcrecordid>eNrjZNALcHT2dnR3VXDzD1JwVPDwdPfQdQtyDQx19XOOVHD1cXUOCfL383RWcHEN83R25WFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgYGZobGhubGZo6GxsSpAgBNeyZO</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PACKAGE FOR A HIGH-FREQUENCY ELECTRONIC DEVICE</title><source>esp@cenet</source><creator>HURKX GODEFRIDUS A.M ; KEMMEREN ANTONIUS LUCIEN A.M ; JANSMAN ANDREAS B.M ; DEKKER RONALD ; VAN NOORT WIBO D</creator><creatorcontrib>HURKX GODEFRIDUS A.M ; KEMMEREN ANTONIUS LUCIEN A.M ; JANSMAN ANDREAS B.M ; DEKKER RONALD ; VAN NOORT WIBO D</creatorcontrib><description>The electronic device comprises a substrate ( 1 ) with a cavity ( 6 ) in which an active device ( 8 ) is present. On the first side ( 2 ) of the substrate an interconnect structure ( 17 ) extends over the cavity and the substrate. On the second side ( 3 ) of the substrate to which the cavity extends, a heat sink ( 23 ) is available. The device is particularly suitable for use at high frequencies, for instance higher than 2 GHz and under conditions of high dissipation.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2006</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20060622&DB=EPODOC&CC=US&NR=2006131736A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20060622&DB=EPODOC&CC=US&NR=2006131736A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HURKX GODEFRIDUS A.M</creatorcontrib><creatorcontrib>KEMMEREN ANTONIUS LUCIEN A.M</creatorcontrib><creatorcontrib>JANSMAN ANDREAS B.M</creatorcontrib><creatorcontrib>DEKKER RONALD</creatorcontrib><creatorcontrib>VAN NOORT WIBO D</creatorcontrib><title>PACKAGE FOR A HIGH-FREQUENCY ELECTRONIC DEVICE</title><description>The electronic device comprises a substrate ( 1 ) with a cavity ( 6 ) in which an active device ( 8 ) is present. On the first side ( 2 ) of the substrate an interconnect structure ( 17 ) extends over the cavity and the substrate. On the second side ( 3 ) of the substrate to which the cavity extends, a heat sink ( 23 ) is available. The device is particularly suitable for use at high frequencies, for instance higher than 2 GHz and under conditions of high dissipation.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2006</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNALcHT2dnR3VXDzD1JwVPDwdPfQdQtyDQx19XOOVHD1cXUOCfL383RWcHEN83R25WFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgYGZobGhubGZo6GxsSpAgBNeyZO</recordid><startdate>20060622</startdate><enddate>20060622</enddate><creator>HURKX GODEFRIDUS A.M</creator><creator>KEMMEREN ANTONIUS LUCIEN A.M</creator><creator>JANSMAN ANDREAS B.M</creator><creator>DEKKER RONALD</creator><creator>VAN NOORT WIBO D</creator><scope>EVB</scope></search><sort><creationdate>20060622</creationdate><title>PACKAGE FOR A HIGH-FREQUENCY ELECTRONIC DEVICE</title><author>HURKX GODEFRIDUS A.M ; KEMMEREN ANTONIUS LUCIEN A.M ; JANSMAN ANDREAS B.M ; DEKKER RONALD ; VAN NOORT WIBO D</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2006131736A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2006</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>HURKX GODEFRIDUS A.M</creatorcontrib><creatorcontrib>KEMMEREN ANTONIUS LUCIEN A.M</creatorcontrib><creatorcontrib>JANSMAN ANDREAS B.M</creatorcontrib><creatorcontrib>DEKKER RONALD</creatorcontrib><creatorcontrib>VAN NOORT WIBO D</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HURKX GODEFRIDUS A.M</au><au>KEMMEREN ANTONIUS LUCIEN A.M</au><au>JANSMAN ANDREAS B.M</au><au>DEKKER RONALD</au><au>VAN NOORT WIBO D</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PACKAGE FOR A HIGH-FREQUENCY ELECTRONIC DEVICE</title><date>2006-06-22</date><risdate>2006</risdate><abstract>The electronic device comprises a substrate ( 1 ) with a cavity ( 6 ) in which an active device ( 8 ) is present. On the first side ( 2 ) of the substrate an interconnect structure ( 17 ) extends over the cavity and the substrate. On the second side ( 3 ) of the substrate to which the cavity extends, a heat sink ( 23 ) is available. The device is particularly suitable for use at high frequencies, for instance higher than 2 GHz and under conditions of high dissipation.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | PACKAGE FOR A HIGH-FREQUENCY ELECTRONIC DEVICE |
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