Technique for reducing backside particles

A technique for reducing backside particles is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for reducing backside particles. The apparatus may comprise a delivery mechanism configured to supply a cleaning substance to a platen, wherein the platen i...

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Bibliographische Detailangaben
Hauptverfasser:	STARKS KENNETH L, SUURONEN DAVID E, DANIELS KEVIN M, RIAF ARTHUR P, MURPHY PAUL J, FICARRA LAWRENCE, BUCCOS PAUL S
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY CLEANING CLEANING IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PERFORMING OPERATIONS PREVENTION OF FOULING IN GENERAL SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING
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Beschreibung
Zusammenfassung:	A technique for reducing backside particles is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for reducing backside particles. The apparatus may comprise a delivery mechanism configured to supply a cleaning substance to a platen, wherein the platen is housed in a process chamber. The apparatus may also comprise a control unit configured to cause the process chamber to reach a first pressure level, cause the cleaning substance to be supplied to a surface of the platen, and cause the process chamber to reach a second pressure level, thereby removing contaminant particles, together with the cleaning substance, from the surface of the platen.