Press pack power semiconductor module

The high-power pack semiconductor module ( 1 ) comprises a layer ( 3, 4 ), which is brought into direct contact with one or both of the main electrodes of the Si semiconductor chip, ( 2 ), said layer being made of a metal matrix composite material whose coefficient of thermal expansion can be tailor...

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Bibliographische Detailangaben
Hauptverfasser: GUNTURI SATISH, SCHNEIDER DANIEL
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:The high-power pack semiconductor module ( 1 ) comprises a layer ( 3, 4 ), which is brought into direct contact with one or both of the main electrodes of the Si semiconductor chip, ( 2 ), said layer being made of a metal matrix composite material whose coefficient of thermal expansion can be tailored to a value either close or matching that of Si.