Method for producing coated workpieces, uses and installation for the method

A method of manufacturing electronic or opto-electronic or micromechanic components by providing a vacuum where the external surface of a wall is exposed to ambient air and the inner surface enclosed as a processing area. A base body of a part to be manufactured is introduced into the processing are...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	WAGNER RUDOLF, RAMM JUERGEN, WILTSCHE SIEGFRIED
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A method of manufacturing electronic or opto-electronic or micromechanic components by providing a vacuum where the external surface of a wall is exposed to ambient air and the inner surface enclosed as a processing area. A base body of a part to be manufactured is introduced into the processing area and a low energy plasma discharged is generated in the process area, the ion energy at the surface of the base body is between 0 and 15 eV in order to introduce a reactive gas. Subsequently, the reactive gas treats the base body in order to separate the processing area from an inner surface of the wall and enclosing the processing area during the treatment.