Plasma etch process for multilayer vias having an organic layer with vertical sidewalls

Plasma etch process for multilayer vias having an organic layer with vertical sidewalls

A process is provided for fabricating a via 52 between bonded wafers without undercutting an organic bonding material 32 . The process for forming the via 52 in a structure including a dielectric material 14 and an organic bonding material 32 , comprises forming a resist material 42 on the dielectri...

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Bibliographische Detailangaben
Hauptverfasser: DAUKSHER WILLIAM J, WESTON DONALD F, LE NGOC V
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A process is provided for fabricating a via 52 between bonded wafers without undercutting an organic bonding material 32 . The process for forming the via 52 in a structure including a dielectric material 14 and an organic bonding material 32 , comprises forming a resist material 42 on the dielectric layer 14 and etching through the dielectric layer 14 and the organic bonding material 32 with 60CF4/20Ar/60CHF3/20N2. The resist may then be removed with an anisotropic high density oxygen plasma.