Method for modeling inductive effects on circuit performance
A method for testing a partially fabricated wafer is provided that comprises the following steps: providing a device under test (DUT) and three reference oscillators overlying a substrate of the wafer; measuring the frequencies of the reference oscillators as influenced by transistor characteristics...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A method for testing a partially fabricated wafer is provided that comprises the following steps: providing a device under test (DUT) and three reference oscillators overlying a substrate of the wafer; measuring the frequencies of the reference oscillators as influenced by transistor characteristics, intra structure parasitics, resistive, capacitive and inductive parasitics; and isolating the inductive parasitics by the appropriate comparisons between the reference oscillators. |
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