Method for selective plasma etch of an oxide layer

The present invention provides, in one embodiment, a method of forming an opening in a dielectric layer 150. In this embodiment, the method comprises forming a dielectric layer 150 over a target layer 130 located over a microelectronic substrate 110 and subjecting the dielectric layer 150 to a plasma etch 165 to form an opening 145 in the dielectric layer 150, wherein the plasma etch 165 is highly selective to the target layer 130, such that a selectivity of the dielectric layer 150 to the target layer 130 is at least about 18:1 and a dielectric etch rate of the plasma etch 165 is at least about 380 nm/min.