Field effect transistor having a carrier exclusion layer
A field-effect transistor comprises a substrate, a channel layer over the substrate, a gate insulator, a gate separated from the channel layer by the gate insulator, and a carrier exclusion layer between the channel layer and the gate insulator, wherein the conduction band energy of the carrier excl...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A field-effect transistor comprises a substrate, a channel layer over the substrate, a gate insulator, a gate separated from the channel layer by the gate insulator, and a carrier exclusion layer between the channel layer and the gate insulator, wherein the conduction band energy of the carrier exclusion layer is larger than the conduction band energy of the channel layer. |
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