Semiconductor memory

The invention relates to semiconductor memories and in particular to DRAMs. A semiconductor memory is provided comprising at least one memory cell adapted to store a data value, and adapted to be connected to a data line through a switch device controlled by a control signal, further comprising a tri-state driver device for driving the control signal. Further, a method for operating a memory is provided, the memory comprising a memory cell adapted to store a data value, and adapted to be connected to a data line through a switch device controlled by a control signal, the method comprising the steps: driving the control signal at a first voltage level when a read operation is to be performed; and driving the control signal at a second voltage level different from the first voltage level when a write operation is to be performed. Advantageously, the first voltage level used for the read operation is lower than the second voltage level used for the write operation.