Semiconductor device

A semiconductor device includes first integrated circuit comprising first to third MOSFET having same channel type, and first to third MOSFETs including gate electrode and gate sidewall insulating film on sidewall of gate electrode, and distance between gate electrodes of first and second MOSFETs, and distance between gate electrodes of first and third MOSFETs being same first distance, and a second integrated circuit comprising fourth MOSFET of which at least one of film thickness of gate insulating film and channel type is different from those of first MOSFET, fifth MOSFET and sixth MOSFET, fourth to sixth MOSFETs having same channel type, and fourth to sixth MOSFETs including gate electrode and gate sidewall insulating film on sidewall of gate electrode, and distance between gate electrodes of fourth and fifth MOSFETs, and distance between gate electrodes of fourth and sixth MOSFETs being same second distance which is different from first distance.