Atmospheric process and system for controlled and rapid removal of polymers from high aspect ratio holes

Atmospheric process and system for controlled and rapid removal of polymers from high aspect ratio holes

A system that generates an intense hot gas stream is described to etch a polymer on a substrate used in the manufacture of semiconductor and MEMS devices with no surface damage. The etching process is particularly useful to remove a polymer from relatively high aspect Height-to-Width and Width-to-He...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: BOLLINGER LYNN D, TOKMOULINE ISKANDER
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A system that generates an intense hot gas stream is described to etch a polymer on a substrate used in the manufacture of semiconductor and MEMS devices with no surface damage. The etching process is particularly useful to remove a polymer from relatively high aspect Height-to-Width and Width-to-Height ratio holes that can include trenches, having relatively large aspect ratios for removal of polymers used in connection with the manufacturing of microstructures.