Methods and structures for critical dimension and profile measurement

Methods and structures for critical dimension and profile measurement

Methods and structures for critical dimension or profile measurement are disclosed. The method provides a substrate having periodic openings therein. Material layers are formed in the openings, substantially planarizing a surface of the substrate. A scattering method is applied to the substrate with...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: TAO HUN-JAN, HSU PENG-FU, CHIOU WENIH, PERNG BAWING, SHIEH JYU-HORNG, CHEN CHIN-JEN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Methods and structures for critical dimension or profile measurement are disclosed. The method provides a substrate having periodic openings therein. Material layers are formed in the openings, substantially planarizing a surface of the substrate. A scattering method is applied to the substrate with the material layers for critical dimension (CD) or profile measurement.