Lateral semiconductor diode and method for fabricating it

The invention relates to a lateral semiconductor diode, in which contact metal fillings ( 6, 7 ), which run in trenches ( 3, 4 ) in particular in a silicon carbide body ( 1, 2 ), are interdigitated at a distance from one another, and a rectifying Schottky or pn junction ( 18 ) is provided.

Bibliographische Detailangaben

Hauptverfasser:	DEHLINGER GABRIEL K, TREU MICHAEL
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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