Lateral semiconductor diode and method for fabricating it
The invention relates to a lateral semiconductor diode, in which contact metal fillings ( 6, 7 ), which run in trenches ( 3, 4 ) in particular in a silicon carbide body ( 1, 2 ), are interdigitated at a distance from one another, and a rectifying Schottky or pn junction ( 18 ) is provided.
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | The invention relates to a lateral semiconductor diode, in which contact metal fillings ( 6, 7 ), which run in trenches ( 3, 4 ) in particular in a silicon carbide body ( 1, 2 ), are interdigitated at a distance from one another, and a rectifying Schottky or pn junction ( 18 ) is provided. |
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