Deposition of hard-mask with minimized hillocks and bubbles

Deposition of hard-mask with minimized hillocks and bubbles

For forming an IC (integrated circuit) structure over a conductive surface, a hard-mask is deposited on the conductive surface with a low temperature in a range of from about 220° Celsius to about 320° Celsius for minimized formation of hillocks. Generally, formation of hillocks and bubbles from dep...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: HUERTAS ROBERT A, AVANZINO STEVEN, NGO MINH V, PHAM HIEU T
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:For forming an IC (integrated circuit) structure over a conductive surface, a hard-mask is deposited on the conductive surface with a low temperature in a range of from about 220° Celsius to about 320° Celsius for minimized formation of hillocks. Generally, formation of hillocks and bubbles from deposition of the hard-mask are minimized on the conductive surface. The hard-mask is etched away from the conductive surface, and the IC structure is formed over the conductive surface after the hard-mask is etched away.