Method for detecting EPI induced buried layer shifts in semiconductor devices

The present invention provides a method for monitoring a shift in a buried layer in a semiconductor device and a method for manufacturing an integrated circuit using the method for monitoring the shift in the buried layer. The method for monitoring the shift in the buried layer, among other steps, includes forming a buried layer test structure ( 200 ) in, on or over a substrate ( 210 ) of a semiconductor device, the buried layer test structure ( 200 ) including a first test buried layer ( 230 a) located in or on the substrate ( 210 ), the first test buried layer ( 230 a) shifted a predetermined distance with respect to a first test feature ( 240 a). The buried layer test structure ( 200 ) further includes a second test buried layer ( 230 b) located in the substrate ( 210 ), the second test buried layer ( 23 b) shifted a predetermined but different distance with respect to a second test feature ( 240 b). The method for monitoring the shift in the buried layer may further include applying a test signal to the buried layer test structure ( 200 ) to determine an actual shift of the first test buried layer ( 230 a) and the second test buried layer ( 230 b) relative to the predetermined shift of the first and second test buried layers ( 230 a and 230 b).