Method of reducing the impact of stray light during optical lithography, devices obtained thereof and masks used therewith

A method of reducing the influence of the spread of the transmitted light on the feature size during optical lithography is disclosed. The method comprises at least two irradiation steps. During a first irradiation the resist is exposed with the original mask, i.e., comprising substantially the patt...

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Bibliographische Detailangaben
Hauptverfasser:	LEUNISSEN PETER, KIM YOUNGANG
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A method of reducing the influence of the spread of the transmitted light on the feature size during optical lithography is disclosed. The method comprises at least two irradiation steps. During a first irradiation the resist is exposed with the original mask, i.e., comprising substantially the pattern to be obtained in the layer. Thereafter, without developing the exposed resist, an irradiation with at least one exposure is performed whereby the resist is exposed with a second mask, being at least partly the inverse of the original mask. The exposures of the second irradiation step are defocused compared to the first irradiation.