Measurement method of electron beam current, electron beam lithography method and system

In an electron-beam lithography system for performing a pattern drawing by causing electron beams to be switched ON/OFF at a high speed in an exposure/non-exposure portion, non-straight line property of beam shot dosage relative to beam ON time worsens dimension accuracy of the drawing pattern forme...

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Bibliographische Detailangaben
Hauptverfasser:	TANAKA NORIYUKI, SOMEDA YASUHIRO, IIZUMI KEN, OHTA HIROYA, SAKAKIBARA MAKOTO, NAKAYAMA YOSHINORI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CONVERSION OF CHEMICAL ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY GAMMA RAY OR X-RAY MICROSCOPES IRRADIATION DEVICES MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY NUCLEAR ENGINEERING NUCLEAR PHYSICS PERFORMING OPERATIONS PHYSICS RADIOACTIVE SOURCES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR TRANSPORTING
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Beschreibung
Zusammenfassung:	In an electron-beam lithography system for performing a pattern drawing by causing electron beams to be switched ON/OFF at a high speed in an exposure/non-exposure portion, non-straight line property of beam shot dosage relative to beam ON time worsens dimension accuracy of the drawing pattern formed on a sample. In order to avoid this drawback, the characteristic of the beam shot dosage relative to the beam ON time is measured in advance, thereby creating correction data for the beam ON time beforehand. Then, at the time of performing the pattern drawing, the beam ON time is corrected based on the correction data so that desired beam shot dosage becomes acquirable.